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AO4614 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO4614L is a Green Product ordering option. AO4614 and AO4614L are electrically identical.
Features
n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m (VGS=10V) < 45m (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) < 63m (VGS = -4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2
D1
SOIC-8
S1
n-channel
p-channel Max p-channel -40 20 -5 -4 -20 2 1.28 -55 to 150 W C A Units V V
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
20 6 5 20 2 1.28 -55 to 150
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 48 74 35 48 74 35
Max Units 62.5 C/W 110 C/W 50 C/W 62.5 110 50 C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4614
N Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, V GS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=5A Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 20 23.2 36 32.6 22 0.77 1 3 404 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.7 8.3 VGS=10V, VDS=20V, I D=6A 4.2 1.3 2.3 4.2 VGS=10V, VDS=20V, RL=3.3, RGEN=3 IF=6A, dI/dt=100A/s IF=6A, dI/dt=100A/s 3.3 15.6 3 20.5 14.5 31 48 45 2.3 Min 40 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30 25 20 ID (A) 4V 15 10 VGS=3.5V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 5 25C ID(A) 10 125C 10V 5V 4.5V 15 20 VDS=5V
0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=6A
50
RDS(ON) (m)
40 VGS=4.5V
VGS=4.5V ID=5A
30
VGS=10V
20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
80 70 60 RDS(ON) (m) ID=6A
1.0E+01 1.0E+00 1.0E-01 125C
40 30 20 10 2 4 6
125C
IS (A)
50
1.0E-02 1.0E-03 25C
25C 8 10
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=20V ID= 6A Capacitance (pF) 800
600 Ciss 400 Coss 200 Crss
0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited 10.0 10ms 1s 1.0 TJ(Max)=150C TA=25C 10s DC 0.1s 100s 1ms 10s Power (W)
40
TJ(Max)=150C TA=25C
30
ID (Amps)
20
10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T 10 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4614
P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-10mA, V GS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-2A Forward Transconductance VDS=-5V, ID=-4.8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -20 34.7 52 50.6 12 -0.75 -1 -3.2 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 13.6 VGS=-10V, VDS=-20V, I D=-5A 6.8 1.8 3.9 7.5 VGS=-10V, VDS=-20V, RL=4, RGEN=3 IF=-5A, dI/dt=100A/s IF=-5A, dI/dt=100A/s 6.7 26 11.2 22.3 15.2 45 65 63 -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30 25 20 -ID (A) 15 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics VGS=-3V -3.5V -ID(A) 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.8 VGS=-4.5V Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) 100 80 60 40 20 2 3 25C 4 5 6 7 8 9 10 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C ID=-5 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-4A VGS=-10V ID=-5A -10V -5V -6V -4.5V -4V 20 25 VDS=-5V
125C 25C
60 55 RDS(ON) (m) 50 45 40 35 30 VGS=-10V
1.0E+01 1.0E+00 1.0E-01 125C
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-20V ID=-5A Capacitance (pF) 1000 800 600 400 200 0 0 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100s 1ms 10ms 10s Power (W)
40
TJ(Max)=150C TA=25C
30
-ID (Amps)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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